Presentation Information
[Mo-P-91LN]Visualization of multiple interface states in n-ch and p-ch 4H-SiC
MOSFETs by time-domain charge-pumping technique.
*Yoshiki Yokoyama1, Masahiro Hori2, Yukinori Ono2, Mitsuru Sometani3, Hiroshisa Hirai3, Bunta Shimabukuro1, Heiji Watanabe4, Takahide Umeda1 (1. Univ. of Tsukuba (Japan), 2. Shizuoka Univ. (Japan), 3. AIST (Japan), 4. Univ. of Osaka (Japan))