Presentation Information
[IP-01]Development of n-type Epitaxial Growth on 300 mm 4H-SiC Wafers
*Weining Qian1,2, Feihong Huang1, Kai Yang1, Gan Feng1, Yongqiang Sun1, Junyong Kang2, Jianhui Zhao1,2 (1. Epiworld International Co., Ltd. (China), 2. Xiamen University (China))
