ICSCRM2026
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Session Details

Short Presentation

[IP]Invited Poster-Short Presentation

Mon. Sep 28, 2026 10:40 AM - 11:00 AM JST
Mon. Sep 28, 2026 1:40 AM - 2:00 AM UTC
Plenary　Oral(1st Floor)
10:40 AM - 10:45 AM JST(1:40 AM - 1:45 AM UTC)

[IP-01]Development of n-type Epitaxial Growth on 300 mm 4H-SiC Wafers

*Weining Qian1,2, Feihong Huang1, Kai Yang1, Gan Feng1, Yongqiang Sun1, Junyong Kang2, Jianhui Zhao1,2 (1. Epiworld International Co., Ltd. (China), 2. Xiamen University (China))
10:45 AM - 10:50 AM JST(1:45 AM - 1:50 AM UTC)

[IP-02]Thermal response of threading dislocations in SiC substrates using UV-excited lock-in thermography

*JUHYEONG Sun1, Ryohei Fujita1, Michio Kawase2, Hosei Nagano1, Masachi Kato3, Kenta Murayama4, Kentaro Kutsukake1,2, Toru Ujihara1,2, Shunta Harada1,2 (1. Nagoya university (Japan), 2. Inst. of Materials and Systems for Sustainability (IMaSS) (Japan), 3. Nagoya Institute of Technology (Japan), 4. Mipox Corporation (Japan))
10:50 AM - 10:55 AM JST(1:50 AM - 1:55 AM UTC)

[IP-03]Gate-Oxide Protection for Enhanced Single-Event Robustness in SiC Power MOSFETs

*Heng WANG1,2, Yun XIA1, LyuZhang PENG3, ChangWei Zheng1, SiRui FENG1, XinPeng LIN1, Pengwei ZHOU2, YingChen YANG2, Gang CHEN1, YuXi WAN1, Gang Lyu3, Kevin Jing CHEN2 (1. Shenzhen Pinghu Lab. (China), 2. The Hong Kong Univ. of Sci. and Tech. (Hong Kong), 3. Beihang Univ. (China))
10:55 AM - 11:00 AM JST(1:55 AM - 2:00 AM UTC)

[IP-04]Evolution of color centers at SiO2/SiC interfaces during repeated thermal annealing tracked in pre-defined observation windows

*Kentaro Onishi1, Masahiro Hara1, Heiji Watanabe1, Takuma Kobayashi1 (1. The University of Osaka (Japan))
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