[Th-1A] Reliability

10:20 AM - 10:40 AM JST(1:20 AM - 1:40 AM UTC)

[Th-1A-02] Bipolar Degradation in 1.2 kV SiC MOSFETs under Microsecond Pulsed Stress: Influence of Accumulated Injected Charge and Thermal Boundary Condition

*Md Hasibul Hasan¹, Rijuta Bagchi¹, Lukas Farnbacher¹, Jürgen Leib¹, Bernd Eckardt¹, Martin März² (1. Fraunhofer IISB (Germany), 2. FAU Erlangen-Nürberg (Germany))