[Th-1A] Reliability | ICSCRM2026

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Session Details

Oral SessionTrack 09 Device and Module Reliability, Packaging, and Applications

[Th-1A]Reliability

Thu. Oct 1, 2026 9:50 AM - 12:00 PM JST
Thu. Oct 1, 2026 12:50 AM - 3:00 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Shiori Idaka(Mitsubishi Electric Europe, Japan), Sangwon Yoon(Seoul National University, Korea)

9:50 AM - 10:20 AM JST(12:50 AM - 1:20 AM UTC)

[Th-1A-01]Bipolar Degradation in SiC Power Devices: Still an Issue?
Recent Findings and Perspectives for Applications and Standardization

*Thomas Basler¹, Clemens Herrmann¹ (1. Chemnitz University of Technology, Germany (Germany))

10:20 AM - 10:40 AM JST(1:20 AM - 1:40 AM UTC)

[Th-1A-02]Bipolar Degradation in 1.2 kV SiC MOSFETs under Microsecond Pulsed Stress: Influence of Accumulated Injected Charge and Thermal Boundary Condition

*Md Hasibul Hasan¹, Rijuta Bagchi¹, Lukas Farnbacher¹, Jürgen Leib¹, Bernd Eckardt¹, Martin März² (1. Fraunhofer IISB (Germany), 2. FAU Erlangen-Nürberg (Germany))

10:40 AM - 11:00 AM JST(1:40 AM - 2:00 AM UTC)

[Th-1A-03]Body Diode Reliability Studies of SiC-MOSFETs Containing Micropipe Defects

*Lucile C. Teague Sheridan¹, Callie M. Woods¹, Michael Pannone¹, Ayan Biswas¹, Brett Hull¹, Jared Langan¹, Keith Boom¹, Keval Patel¹, Don Gajewski¹, Elif Balkas¹ (1. Wolfspeed, Inc (USA))

11:00 AM - 11:20 AM JST(2:00 AM - 2:20 AM UTC)

[Th-1A-04]Recombination-Enhanced Interface State Generation in SiC-MOSFETs under AC Gate Stress Evaluated by Charge Pumping

*Tsuyoshi Hidaka¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba (Japan))

11:20 AM - 11:40 AM JST(2:20 AM - 2:40 AM UTC)

[Th-1A-05]High-Dose Total Ionizing Dose Effects in Commercial 4H-SiC MOSFETs and Alternative Power Devices

Virendra Kotagama¹, Sami Kibal², Rachel A Oliver², Arne B Renz¹, Vishal A Shah¹, Marina Antoniou¹, *Peter M Gammon¹ (1. University of Warwick (UK), 2. University of Cambridge (UK))

11:40 AM - 12:00 PM JST(2:40 AM - 3:00 AM UTC)

[Th-1A-06]Discern Failure Mechanisms in Dynamic HV-H³TRB Testing

*Jan-Hendrik Peters¹, Felix Hoffmann², Stefan Schmitt², Nando Kaminski¹ (1. University of Bremen (Germany), 2. Semikron Danfoss Elektronik GmbH & Co. KG (Germany))

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