[Th-1B] Point Defects and Material Properties

10:20 AM - 10:40 AM JST(1:20 AM - 1:40 AM UTC)

[Th-1B-02] Evaluation of sub-nanosecond carrier lifetimes in 4H-SiC crystals using time-resolved photoluminescence

*Koichi Murata¹, Satoshi Asada¹, Hidekazu Tsuchida¹ (1. Central Research Institute of Electric Power Industry (CRIEPI) (Japan))