Session Details
[Th-1B]Point Defects and Material Properties
Thu. Oct 1, 2026 9:50 AM - 12:00 PM JST
Thu. Oct 1, 2026 12:50 AM - 3:00 AM UTC
Thu. Oct 1, 2026 12:50 AM - 3:00 AM UTC
Oral-B(3rd Floor, G303+G304)
Chair:Hrishikesh Das(Indichip Semiconductors, USA), Masashi Kato(Nagoya Institute of Technology, Japan)
[Th-1B-01]Impact of Pre-Oxidation on Intrinsic Point Defect Formation in Electron-Irradiated 4H-SiC
*Kotaro Yamanaka1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1. Kyoto Univ. (Japan))
[Th-1B-02]Evaluation of sub-nanosecond carrier lifetimes in 4H-SiC crystals using time-resolved photoluminescence
*Koichi Murata1, Satoshi Asada1, Hidekazu Tsuchida1 (1. Central Research Institute of Electric Power Industry (CRIEPI) (Japan))
[Th-1B-03]Quantitative Evaluation of Stacking Fault-Induced Non-Linear Resistance in Schottky Barrier Diodes
Do Yeon Park1,2, *Moonkyong Na1, Taswar Iqbal3, Soon-Ku Hong3, Sung Yun Woo2, Hyundon Jung4, Dohyung Kim4, In Ho Kang1, Jae Hwa Seo1, Byoung Hoon Noh5, Kyung Seok Oh5 (1. Korea Electrotech. Res. Inst. (Korea), 2. Kyungpook National Univ. (Korea), 3. Chungnam National Univ. (Korea), 4. Horiba STEC Korea (Korea), 5. ARCHE Co., Ltd. (Korea))
[Th-1B-04]Revealing the Origin of Boron-related Deep Levels in 4H-SiC
*Rishi Kupper1, Manuel Belanche1, Helton Goncalves de Medeiros1, Natalija Für1, Ulrike Grossner1 (1. APS - ETH Zurich (Switzerland))
[Th-1B-05]Optical-Pump Terahertz-Probe Spectroscopy of Carrier Lifetimes in 4H-SiC
*Nikolaos Iosifidis1, Arne Benjamin Renz1, Mustafa Akif Yildirim1, Kyrylo Melnyk1, Vishal Shah1, Qinze Cao1, Jack Woolley1, James Lloyd-Hughes1, Peter Michael Gammon1 (1. Univ. of Warwick (UK))
[Th-1B-06]Analysis of Deep-Level Effects on Switching Characteristics of SJ-MOSFETs
*Takeshi Tawara1, Kensuke Taknaka2, Shinichiro Matsunaga1, Shinsuke Harada1 (1. National Inst. of Advanced Industrial Science and Technology (AIST) (Japan), 2. Fuji Electric Corp., Ltd. (Japan))