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1:50 PM - 2:10 PM JST
(4:50 AM - 5:10 AM UTC)
[Th-2A-02]
Breaking trade-off relationship between channel mobility and threshold voltage in SiC MOSFETs by shallow counter doping
*Kyota Mikami
1
, Ryuta Kajiwara
1
, Mitsuaki Kaneko
1
, Tsunenobu Kimoto
1
(1. Kyoto Univ. (Japan))
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