ICSCRM2026
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Session Details

Oral SessionTrack 05 MOS Gate Stack Processing and Characterization

[Th-2A]Interface Charge

Thu. Oct 1, 2026 1:30 PM - 2:50 PM JST
Thu. Oct 1, 2026 4:30 AM - 5:50 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Hirohisa Hirai(National Institute of Industrial Science and Technology, Japan), Patrick Fiorenza(CNR-IMM, Italy)
1:30 PM - 1:50 PM JST(4:30 AM - 4:50 AM UTC)

[Th-2A-01]Quantum Mechanical Effects on Threshold Voltage in 4H-SiC MOSFETs

*Ryuta Kajiwara1, Shion Toshimitsu1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ. (Japan))
1:50 PM - 2:10 PM JST(4:50 AM - 5:10 AM UTC)

[Th-2A-02]Breaking trade-off relationship between channel mobility and threshold voltage in SiC MOSFETs by shallow counter doping

*Kyota Mikami1, Ryuta Kajiwara1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ. (Japan))
2:10 PM - 2:30 PM JST(5:10 AM - 5:30 AM UTC)

[Th-2A-03]Split C-V Measurements for the Separate Extraction of Interface Trap Density and Fixed Charge in (0001) 4H-SiC MOSFETs

*Shane Stein1, Daniel Lichtenwalner1, Sei-Hyung Ryu1 (1. Wolfspeed (USA))
2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[Th-2A-04]Decoupling Effective Field, Screening, and Temperature Dependencies of Inversion Layer Mobility in SiC MOSFETs: Physical Insight into Dominant Scattering Mechanisms

*Tetsuo Hatakeyama1, Hirohisa Hirai2, Mitsuru Sometani2, Mitsuo Okamoto2, Shinsuke Harada2 (1. Toyama Prefectural Univ. (Japan), 2. AIST (Japan))
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