[Th-P] Poster Session

[Th-P-02] TCAD Modelling of the SiO2/4H-SiC Interface and Threshold-Voltage Degradation in SiC Planar MOSFETs

Xiao Xiong¹, Huang Zhongtian², Konstantinos Zaoskoufis¹, Asad Fayyaz², Paul Evans², Ke Li², Munaf Rahimo³, *Neophytos Lophitis¹ (1. Cyprus Univ. of Tech. (Cyprus), 2. The Uni. Of Nottingham (UK), 3. mqSemi AG (Switzerland))