[Th-P] Poster Session | ICSCRM2026

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Poster Session

[Th-P]Poster Session

Thu. Oct 1, 2026 3:00 PM - 5:00 PM JST
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC

Poster-A (1st Floor)

[Th-IP]Evolution of color centers at SiO₂/SiC interfaces during repeated thermal annealing tracked in pre-defined observation windows

*Kentaro Onishi¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1. The University of Osaka (Japan))

[Th-P-01]A Correction Method for Interface-State Analysis in TCAD Modeling of 4H-SiC MOSFET Transfer Characteristics

*Sozo Kanie¹, Shunsuke Asaba¹, Rintaro Miyata¹, Katsuhisa Tanaka¹ (1. Toshiba Electronic Devices & Storage Corporation (Japan))

[Th-P-02]TCAD Modelling of the SiO2/4H-SiC Interface and Threshold-Voltage Degradation in SiC Planar MOSFETs

Xiao Xiong¹, Huang Zhongtian², Konstantinos Zaoskoufis¹, Asad Fayyaz², Paul Evans², Ke Li², Munaf Rahimo³, *Neophytos Lophitis¹ (1. Cyprus Univ. of Tech. (Cyprus), 2. The Uni. Of Nottingham (UK), 3. mqSemi AG (Switzerland))

[Th-P-03]TCAD Simulations of 4H-SiC MOS Transistors: Dependence on Oxide Interface and Temperature

*Axel Hartmann¹, Christophe Pixius¹, Mathias Rommel¹ (1. Fraunhofer IISB (Germany))

[Th-P-04]Conduction-Band-Side Interface States and Their Reactions with NO Post-Oxidation Anneal Revealed by Electrically-Detected -Magnetic-Resonance (EDMR) Spectroscopy

*Keigo Adachi¹, Bunta Shimabukuro¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takahide Umeda¹ (1. Univ. of Tsukuba (Japan), 2. National Inst. for Advanced Indus. Sci. and Tech. (Japan), 3. The Univ. of Osaka (Japan))

[Th-P-05]Surface Sensitive Raman and Photoluminescence Study of the SiO₂/SiC Interface

*Immo Erdmann¹, Helton Goncalves de Medeiros¹, Pietro Marabotti², Marianne Etzelmuller Bathen³, Sebastian Heeg², Ulrike Grossner¹ (1. APS - ETH Zurich (Switzerland), 2. Humboldt-Universität zu Berlin (Germany), 3. University of Oslo (Norway))

[Th-P-06]Non-contact Electrical Characterization of Oxidized p-type 4H SiC Using Corona C-V Metrology

*Marshall Wilson¹, Robin Karhu², Mathias Rommel², Jannik Schwarberg³, Bradley Wilson¹, Joanna Wincukiewicz¹, Adam Wincukiewicz¹, Ivan Shekerov¹ (1. Onto Innovation (USA), 2. Fraunhofer IISB (Germany), 3. Friedrich-Alexander-Universität (Germany))

[Th-P-07]Capacitive response of deep traps in implanted p-MOS by frequency-dependent and quasi-static measurements at low temperature or under UV illumination

Marco Zignale¹, *Patrick Fiorenza¹, Valeria Puglisi², Paola Mancuso², Simone Rascunà², Mario Saggio², Marilena Vivona¹, Filippo Giannazzo¹, Fabrizio Roccaforte¹ (1. CNR-IMM (Italy), 2. STMicroelectronics (Italy))

[Th-P-08]Fabrication and Characterization of p-Channel MOSFETs on a Solution-Grown 4H-SiC Wafer

*Kota Mano¹, Taisei Ozaki², Shunto Higashi², Yu Matsuda¹, Tomonori Umezaki¹, Shin-ichiro Kuroki² (1. Central Glass Corp. Ltd. (Japan), 2. Hiroshima Univ. (Japan))

[Th-P-09]High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation

*Alfio Samuele Mancuso^1,2, Saverio De Luca², Enrico Sangregorio², Annamaria Muoio², Erik Gallo³, Eleonora Quadrivi³, Silvia Vanellone³, Antonio Trotta³, Marco Mauceri⁴, Salvatore Tudisco⁵, Francesco La Via² (1. Univ. of Catania (Italy), 2. Inst. of CNR-IMM (Italy), 3. Corp. of ENI S.p.a (Italy), 4. Manufac. of ASM International (Italy), 5. Inst. of INFN-LNS (Italy))

[Th-P-10]Optimization of Ion Implantation for Suppressing Stacking Fault Expansion in 4H-SiC

*Tong Li¹, Hitoshi Sakane², Shunta Harada³, Masashi Kato¹ (1. Nagoya Inst. of Tech. (Japan), 2. SHI-ATEX Co., Ltd. (Japan), 3. Nagoya Univ. (Japan))

[Th-P-11]Structural and Electrical Characterization of He Ion Implanted 4H-SiC

*Ben J. Sekely¹, Cory D. Cress¹, Jeffery M. Woodward¹, Daniel J. Pennachio¹, Ignas Lekavicius¹, Jenifer R. Hajzus¹, Rachael L. Myers-Ward¹ (1. U.S. Naval Research Lab. (USA))

[Th-P-12]Implant Annealing of 4H SiC Using a Standard RTP Platform System

*Peter Benkart¹, David Mendler², Thorsten Hülsmann³, Philipp Fricker³, Michael Storek³ (1. Mattson International GmbH (Germany), 2. Infineon Technologies Austria AG (Austria), 3. Mattson Thermal Products GmbH (Germany))

[Th-P-13]Medeor^TM Non-Uniform Ion Implantation for Device Performance and Yield Enhancement in SiC Power Devices

*Nan Zheng¹, Supakit Charnvanichborikarn¹, Tyler Wills¹, Scott Oleson¹, Hans Gossmann¹, Xiangdong He¹, Shan Tang¹, William Bogiages¹, Pratim Palit¹, Jonathan Lowder¹, Shardul Patel¹, Wei Zou¹, Jay Scheuer¹ (1. Applied Materials, Inc. (USA))

[Th-P-14]Technology Development of Implantation Masks for a Multi Epitaxy, Multi Implant Approach for 4H-SiC Superjunction Drift Zones

*Janina Engelhardt¹, Oleg Rusch¹, Volker Häublein¹, Nikolas Schabert¹, Rupert Ullmann², Philip Hens², Birgit Kallinger¹, Michael Jank¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany), 2. Aixtron SE (Germany))

[Th-P-15]Monitoring Low-Dose Ion Implantation in 4H-SiC Wafers Using Photomodulated Reflectance Technique

*Laszlo Balogh¹, Denes Ullrich^1,2, Janos Szivos¹, Zoltan Bozoki¹, Gaszton Vizsnyiczai¹, Bence Mate Kovacs¹, Ors Sepsi¹, Jeong Hyun Moon³ (1. Semilab Corp. (Hungary), 2. Budapest University of Technology and Economics (Hungary), 3. Korea Electrotechnology Research Inst. (Korea))

[Th-P-16]Effect of Sputter-Deposited Carbon Capping on Surface Stability and Interface Trap Suppression in 4H-SiC

*Jaeyoon Kim¹, Yehwan Kang¹, Junghyun Moon², Denes Ullrich³, Janos Szivos³, Laszlo Balogh³, Zoltan Bozoki³, Changheon Yang¹ (1. SK powertech (Korea), 2. Korea Electrotechnology Research Inst. (Korea), 3. SEMILAB (Hungary))

[Th-P-17]Formation of highly doped p-type junctions in SiC via laser-assisted implantation, followed by microsecond (µs) UV laser annealing

*Zeinab CHEHADI¹, Shintaro Hirano², Tae-Hoon Huh², Akichika Oono², Anthony Albanese¹, Yoshiaki Inda², Junichiro Mitsui², Abderazek Talbi¹, Yoji kawasaki², Louis Thuries¹ (1. Sumitomo (SHI) Material Solutions Europe SASU (France), 2. Sumitomo Heavy Industries Material Solutions Co., Ltd. (Japan))

[Th-P-18]Effect of Ion Implantation on Thermal Oxidation in n-Type 4H-SiC

*An Min Amanda Lee^1,2, Jinlong Liu^2,1, Zirui Tan^2,1, Shiv Kumar¹, Eng Soon Tok², Umesh Chand¹, Woo Bin Song¹, Xiao Gong¹, Navab Singh¹, Yee-Chia Yeo^1,3 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Department of Physics, National Univ. of Singapore (Singapore), 3. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore))

[Th-P-19]Thermal Probe (TP) Measurements for Ion Implantation Monitoring on Silicon Carbide Substrates

*Sedat Dogan¹, Axel Koenig¹, Martin Haberjahn^2,3, Tetyana Shapoval³, Refat Soliman³, Jie Zhu⁴ (1. Infineon Technologies Austria AG (Austria), 2. Infineon Technologies AG (Austria), 3. KLA Corporation (Germany), 4. KLA Corporation Shanghai (China))

[Th-P-20]Large Area 4H-SiC Schottky Barrier Diodes for the Detection of Fast Neutrons

*Jarod Remy¹, Ethan Schieb¹, Raymond Cao¹ (1. The Ohio State University (USA))

[Th-P-21]Integrated DE/E detector realization and testing for nuclear physics experiments

*Francesco La Via¹, G. M. Falciglia², Alfio Samuele Mancuso¹, Carmen Altana², Saverio De Luca¹, Enrico Sangregorio¹, Giuseppe Sapienza², Marco Mauceri³, Salvatore Tudisco² (1. CNR-IMM (Italy), 2. INFN-LNS (Italy), 3. ASM (Italy))

[Th-P-22]Multi-Source Reverse-Bias Study of a 100-µm 4H-SiC P-i-N Detector: From UV–TCT to D–T Neutron Response

*Alfio Samuele Mancuso^1,2, Ivan Lopez Paz³, Matteo Hakeem Kushoro^4,5, Saverio De Luca², Erik Gallo⁶, Marcio Jiménez³, Neil Moffat³, Annamaria Muoio², Giulio Pellegrini³, Martín Pérez^7,8, Eleonora Quadrivi⁶, Enrico Sangregorio², Antonio Trotta⁶, Salvatore Tudisco⁹, Silvia Vanellone⁶, Francesco La Via² (1. Univ. of Catania (Italy), 2. Inst. of CNR-IMM (Italy), 3. Inst. of IMB-CNM (CSIC) (Spain), 4. Univ. of Milano-Bicocca (Italy), 5. Inst. of ISTP-CNR (Italy), 6. Corp. of ENI s.p.a. (Italy), 7. Res. of CNEA (Argentine), 8. Res. of CONICET (Argentine), 9. Inst. of INFN-LNS (Italy))

[Th-P-23]Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection

*Enrico Sangregorio¹, Alfio Samuele Mancuso², Saverio De Luca¹, Annamaria Muoio¹, Lucia Calcagno², Francesco La Via¹ (1. National Research Council of Italy - Institute for Microelectronics and Microsystems (Italy), 2. Department of Physics and Astronomy, University of Catania (Italy))

[Th-P-24]Heteroepitaxial 3C-SiC for MEMS Applications

*Francesco La Via¹, Annamaria Muoio¹, Angela Garofalo² (1. CNR-IMM (Italy), 2. Materials Science Department, Milano—Bicocca University (Italy))

[Th-P-25]Design, Fabrication and Characterization of Vertical Mesa 4H-SiC LGADs

Chuibang Jia¹, *mingsheng Xu¹, Jianxin Dong¹, Yifei Chen¹, Lei Ge¹, Jisheng Han¹, Xiangang Xu¹ (1. Shandong University (China))

[Th-P-26]Characterization of Fluence-Dependent Defect Formation in Diamond Toward Fluorescence-Based Fast-Neutron Dosimetry

*Luke Shoen¹, Andrew Tong², Jack Lanza¹, Jennifer Choy², Raymond Cao¹ (1. The Ohio State Univ. (USA), 2. The Univ. of Wisconsin-Madison (USA))

[Th-P-27]Magnetic Field Imaging of Electrical Signals using quantum SiC microscope (QSiCM)

*Andrei N. Anisimov¹, Ayisha Suhana, Tatiana Aureliia Uaman Svetikova, Christof Schneider, Manfred Helm, Georgy V. Astakhov (1. Helmholtz-Zentrum Dresden-Rossendorf (Germany))

[Th-P-28]Optically Detected Magnetic Resonance of Silicon Vacancies in 4H-SiC Formed by High Fluence Electron Irradiation

*Akinori Nishimoto^1,2, Shin-ichiro Sato², Koichi Murata³, Masafumi Hanawa³, Hidekazu Tsuchida³, Seiichi Saiki², Yuichi Yamazaki², Takeshi Ohshima^2,4, Yasuto Hijikata¹ (1. Univ. of Saitama (Japan), 2. National Inst. for Quantumn Science and Tech. (Japan), 3. Central Res. Inst. of Electric Power Industry (Japan), 4. Univ. of Tohoku (Japan))

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