Presentation Information

[Th-P-09]High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation

*Alfio Samuele Mancuso1,2, Saverio De Luca2, Enrico Sangregorio2, Annamaria Muoio2, Erik Gallo3, Eleonora Quadrivi3, Silvia Vanellone3, Antonio Trotta3, Marco Mauceri4, Salvatore Tudisco5, Francesco La Via2 (1. Univ. of Catania (Italy), 2. Inst. of CNR-IMM (Italy), 3. Corp. of ENI S.p.a (Italy), 4. Manufac. of ASM International (Italy), 5. Inst. of INFN-LNS (Italy))