Presentation Information

[Th-P-10]Optimization of Ion Implantation for Suppressing Stacking Fault Expansion in 4H-SiC

*Tong Li1, Hitoshi Sakane2, Shunta Harada3, Masashi Kato1 (1. Nagoya Inst. of Tech. (Japan), 2. SHI-ATEX Co., Ltd. (Japan), 3. Nagoya Univ. (Japan))