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[Th-P-17]Formation of highly doped p-type junctions in SiC via laser-assisted implantation, followed by microsecond (µs) UV laser annealing

*Zeinab CHEHADI1, Shintaro Hirano2, Tae-Hoon Huh2, Akichika Oono2, Anthony Albanese1, Yoshiaki Inda2, Junichiro Mitsui2, Abderazek Talbi1, Yoji kawasaki2, Louis Thuries1 (1. Sumitomo (SHI) Material Solutions Europe SASU (France), 2. Sumitomo Heavy Industries Material Solutions Co., Ltd. (Japan))