Presentation Information
[Th-P-41]Annealing-Driven Interface Engineering of Ni/(Al0.4Ga0.6)2O3/4H-SiC Heterojunction Power Diodes
*Minseok Kim1, Chowdam Venkata Prasad1, Hyeon-Do Kang1, Jin-Woo Choi1, Chang-Jun Park1, Geon-Hee Lee1, Kung-Yen Lee2, Sang-Mo Koo1 (1. Kwangwoon Univ. (Korea), 2. National Taiwan Univ. (Taiwan))