[Th-P] Poster Session | ICSCRM2026

Session Details

Poster Session

[Th-P]Poster Session

Thu. Oct 1, 2026 3:00 PM - 5:00 PM JST
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC

Poster-B (4th Floor, G401+G402)

[Th-P-30]A Novel Process for Fabricating Thick Bottom OXide (TBOX) UMOSFET on 4H-SiC

*An-Ching Li¹, Li-Tien Hsueh¹, Bing Yue Tsui¹, Chia-Lung Hung², Yi-Kai Hsiao² (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Hon Hai Research Inst. (Taiwan))

[Th-P-31]Interface Engineering of 4H-SiC Schottky Barrier Diodes using Molecular Surface Modification for Superior Electrical Performance

*Shivansh Tiwari¹, Tejas R. Naik¹, Kamlesh Bhatt¹, Manish Singh Rautela¹, Satwik Mahasha¹, Rajendra Singh¹ (1. Indian Institute of Technology Delhi (India))

[Th-P-32]Edge Termination Optimization in 1200V 4H-SiC Devices

*Naeem Islam¹, Jae-Hyung Park¹, Woongsun Kim¹, Jeff Joohyung Kim¹, Ayan Biswas¹, Sei-Hyung Ryu¹ (1. Wolfspeed Inc. (USA))

[Th-P-33]A Robust Trench Ring-Assisted Junction Termination Extension on a PN Multi-Epitaxial Layer for 6.5 kV-class SiC PiN Diodes

*Jeongtae Kim¹, Sumin Park¹, Wonyoung Shin¹, Juhui Kim¹, Sihyun Kwon¹, Ogyun Seok¹ (1. Univ. of Pusan (Korea))

[Th-P-34]Fabrication of a 6.5 kV Robust SiC JBS Diode Using a Dose-Insensitive A Novel Structure Hybrid-CPG Termination

*Sang-Gi Kim¹, Sung Mo Koo¹, Won-Chan Kim¹, Dong-Ju Kang¹, Dong-Hoon Lee¹, Myung Hwan Lee¹, Gwon-Je Kim¹ (1. EYEQLAB (Korea))

[Th-P-35]Correlation Between Forward Voltage Drift and 1SSF in 4H-SiC Power Diodes

*Cristiano Calabretta¹, Camille Vuylsteker¹, Adrien Marchadier¹, Alice Lombardo¹, Nicolò Piluso¹, Giuseppe Arena¹, Andrea Severino¹ (1. Ind. STMICROELECTRONICS (Italy))

[Th-P-36]Performance Optimization and Tradeoffs of 30kV-rated 4H-SiC Epitaxial-Anode and Implanted-Anode PiN Junction Diodes

*Giorgian Borca-Tasciuc¹, Zhaowen He¹, Collin Hitchcock¹, Nick LaBry¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Inst. (USA))

[Th-P-37]First Demonstration of 200mm Wafer Level 6.5 kV-Class 4-H SiC PiN Diodes

*Xinghua Wang¹, Zhaoxue Yuan², Xiaolin Wang^1,3, Abhishek Mishra¹, Yu-Chieh Chieh¹, Peter Gammon², Marina Antoniou², Weijie Wang¹, Nikolaos Iosifidis², Zijie Zheng^1,3, Arne Renz², Qin Gui Voo¹, Shiv Kumar¹, Umesh Chand¹, Leming Jiao^1,3, Runze Wang¹, Arvind Sundaram¹, Liyuan Liu¹, Xiao Gong^1,3, Navab Singh¹, Yee Chia Yeo^1,3 (1. Institute of Microelectronics, Agency for Science, Technology, and Research (A*STAR) (Singapore), 2. University of Warwick (UK), 3. National University of Singapore (Singapore))

[Th-P-38]Bevel Angle Design Method Based on Fabrication Limits of Vertical GaN PIN Diodes

*Hee Jin Kim¹ (1. Pusan National University (Korea))

[Th-P-39]Si-content effects on aerosol-deposited Ga₂O₃/4H-SiC
Schottky diodes

*Chang-Jun Park¹, Jin-Woo Choi¹, Hyeon-Do Kang¹, Sabeen Hwang¹, Tae-Yeong Yoon¹, Sang-Mo Koo¹ (1. Kwangwoon Univ. (Korea))

[Th-P-40]Effects of Powder Sintering Temperature and Tin (Sn) Ratio on Electrical Characteristics and Leakage Mechanism in Vertical Ga2O3/4H-SiC Schottky Diodes Fabricated by Aerosol Deposition

*Jin-Woo Choi¹, Minseok Kim¹, Hyeon-Do Kang¹, Chang-Jun Park¹, Sa-Been Hwang¹, Chowdam Venkata Prasad¹, Sang-Mo Koo¹ (1. Kwangwoon Univ. (Korea))

[Th-P-41]Annealing-Driven Interface Engineering of Ni/(Al_0.4Ga_0.6)₂O₃/4H-SiC Heterojunction Power Diodes

*Minseok Kim¹, Chowdam Venkata Prasad¹, Hyeon-Do Kang¹, Jin-Woo Choi¹, Chang-Jun Park¹, Geon-Hee Lee¹, Kung-Yen Lee², Sang-Mo Koo¹ (1. Kwangwoon Univ. (Korea), 2. National Taiwan Univ. (Taiwan))

[Th-P-42]Optically-Switched 4H-SiC Power Bipolar Junction Transistor (BJT) - Influence of the device design

*Dominique Planson¹, Camille Sonneville¹, Pascal Bevilacqua¹, Enora Vuillermet¹, Luong Viet Phung¹, Pierre Brosselard¹, Mihai Lazar², Bertrand Vergne³, Sigo Scharnholz³, Herve Morel¹ (1. Lab. Ampere (France), 2. Lab. L2n (France), 3. Inst. Saint-Louis (France))

[Th-P-43]Radiation Hardening of 4H-SiC Photodiode by Dummy Interconnects

*Taketo Yamamoto¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Kazutoshi Kojima³, Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1. Hiroshima university (Japan), 2. QST (Japan), 3. AIST (Japan))

[Th-P-44]Towards the development of SiC Low-Gain Avalanche Diodes for fast timing applications in harsh environment

*Stephanie Cancelli¹, Giovanni Paternoster¹, Matteo Centis Vignali¹, Maurizio Boscardin¹, Oscar Ariel Marti Villareal¹, Giancarlo Pepponi¹, Francesco Moscatelli², Arianna Morozzi³, Daniele Passeri⁴, Valentina Sola⁵, Mara Bruzzi⁶ (1. Fondazione Bruno Kessler (Italy), 2. National Res. Council (Italy), 3. National Inst. of Nuclear Physics (Italy), 4. Univ. of Perugia (Italy), 5. Univ. of Torino (Italy), 6. Univ. of Firenze (Italy))

[Th-P-45]256-Pixel 4H-SiC UV CMOS Image Sensor for Harsh Environment Applications

*Tatsuya Meguro¹, Taketo Yamamoto¹, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Akinori Takeyama³, Takeshi Ohshima³, Kazutoshi Kojima⁴, Yasunori Tanaka⁴, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ. (Japan), 2. Phenitec Semiconductor Corp. (Japan), 3. QST (Japan), 4. AIST (Japan))

[Th-P-46]On-Wafer 25 °C Comparison Study of IC-Processed 4H-SiC Extreme Environment Resistive Sensor Bridge Designs

*Philip Neudeck¹, David Spry¹, Carl Chang² (1. NASA Glenn Research Center (USA), 2. HX5 LLC (USA))

[Th-P-47]773 K Operation Characteristics of 4H-SiC Phorodiodes

*Yusuke Hata¹, Tatsuya Meguro¹, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Akinori Takeyama³, Takeshi Ohshima³, Kazutoshi Kojima⁴, Yasunori Tanaka⁴, Shin-Ichiro Kuroki¹ (1. RISE, Hiroshima Univ. (Japan), 2. Phenitec Semiconductor Corp. (Japan), 3. QST (Japan), 4. AIST (Japan))

[Th-P-48]400^oC High Temperature and 125 hours Operation of 4H-SiC CMOS Operational Amplifier Circuits

*Dung Anh Nguyen¹, Kazutoshi Kojima², Seiji Ishikawa^1,3, Tomonori Maeda^1,3, Hiroshi Sezaki^1,3, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ. (Japan), 2. AIST (Japan), 3. Phenitec Semiconductor Corp. (Japan))

[Th-P-49]Suppression of short channel effects by the LDD structure in 4H-SiC n-MOSFETs up to 500 ℃ environments

*Kota Shimizu¹, Kosuke Muraoka¹, Akinori Takeyama², Takeshi Ohshima², Kazutoshi Kojima³, Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))

[Th-P-50]Evolution of Bipolar Degradation over Time and Its Influence on Short Circuit Behavior

*Clemens Herrmann¹, Jonas Prenzel¹, Christian Bäumler¹, Rudolf Elpelt², Larissa Wehrhahn-Kilian², Thomas Basler¹ (1. Chemnitz Univ. of Tech. (Germany), 2. Infineon Tech. AG (Germany))

[Th-P-51]Combining Optical Binning and Engineered SmartSiC^TM Substrates for Superior MOSFET Ruggedness to Bipolar Degradation

*Tommaso Stecconi¹, Roger Stark¹, Paula Diaz Reigosa¹, Nick Schneider¹, Nicolo Oliva¹, Coris Li², Leon Liang², Eric Guiot³, Alexandre Vaufredaz³, Ngosse Top³, Lars Knoll¹ (1. SwissSEM Technologies AG (Switzerland), 2. Sun.King Pacific Semiconductor Technology (China), 3. SOITEC (France))

[Th-P-52]Short Circuit of Bipolar Degraded Devices: Lateral Temperature Profile, Metallization Imprint, and Saturation-Current Decrease

*Christian Bäumler¹, Clemens Herrmann¹, Jonas Prenzel¹, Thomas Basler¹ (1. Chemnitz University of Technology (Germany))

[Th-P-53]Accurate Temperature-Dependent SiC MOSFET Model for Short
Circuit Simulation of Parallel Devices

*Giuseppe Strollo¹, Anja Brandl¹, Michel Nagel¹, Ivana Kovacevic¹, Ulrike Grossner¹ (1. APS - ETH Zurich (Switzerland))

[Th-P-54]Comparison of Ruggedness of Surge-, Unclamped Inductive Switching- and Short Circuit-Stress in 4H-SiC MOSFETs

*Philipp Steinmann¹, Ramona Buckreus¹, Sabrina Ulmer¹, Tugrul Sahin¹ (1. Robert Bosch GmbH (Germany))

[Th-P-55]Reliability Impact of Laser-Sawing-Induced Sidewall Damage and Backside Recast Residue in SiC MOSFET Packaging

*Pei-Huan Lee¹, Hong-Rui Huang¹, Chien-Hsiung Huang¹, Cheng-Yen Lin¹, Yu-Hsien Lai¹, Hsin-Chung Tsai¹, Hyper Chang¹ (1. ACTRON TECHNOLOGY Corp. (Taiwan))

[Th-P-56]A Novel 4H-SiC-Based ESD NPN Protection Circuit with Reduced Trigger Voltage and Improved Second breakdown Current

*bobae Song¹, youngchul Kim¹, jongmin Kim¹, hyunchul Nah¹, heebae Lee¹, sanggi Lee¹ (1. DB Hitek (Korea))

[Th-P-57]Surface Features Associated with Body Diode Current

*Sujitra Pookpanratana¹, Muhammad Waqas Khaliq^1,2, Andrew J. Winchester¹, Valerie Hoang^1,3, Tyler Gervasio¹, Michael Lloyd¹, Gelu Comanescu¹, Albert Davydov¹, Behrang Hamadani¹ (1. National Institute of Standards and Technology (USA), 2. Georgetown University (USA), 3. University of Maryland College Park (USA))

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