Presentation Information
[Th-P-42]Optically-Switched 4H-SiC Power Bipolar Junction Transistor (BJT) - Influence of the device design
*Dominique Planson1, Camille Sonneville1, Pascal Bevilacqua1, Enora Vuillermet1, Luong Viet Phung1, Pierre Brosselard1, Mihai Lazar2, Bertrand Vergne3, Sigo Scharnholz3, Herve Morel1 (1. Lab. Ampere (France), 2. Lab. L2n (France), 3. Inst. Saint-Louis (France))