[Th-P] Poster Session

[Th-P-47] 773 K Operation Characteristics of 4H-SiC Phorodiodes

*Yusuke Hata¹, Tatsuya Meguro¹, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Akinori Takeyama³, Takeshi Ohshima³, Kazutoshi Kojima⁴, Yasunori Tanaka⁴, Shin-Ichiro Kuroki¹ (1. RISE, Hiroshima Univ. (Japan), 2. Phenitec Semiconductor Corp. (Japan), 3. QST (Japan), 4. AIST (Japan))