[Th-P] Poster Session

[Th-P-48] 400^oC High Temperature and 125 hours Operation of 4H-SiC CMOS Operational Amplifier Circuits

*Dung Anh Nguyen¹, Kazutoshi Kojima², Seiji Ishikawa^1,3, Tomonori Maeda^1,3, Hiroshi Sezaki^1,3, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ. (Japan), 2. AIST (Japan), 3. Phenitec Semiconductor Corp. (Japan))