Presentation Information
[Th-P-49]Suppression of short channel effects by the LDD structure in 4H-SiC n-MOSFETs up to 500 ℃ environments
*Kota Shimizu1, Kosuke Muraoka1, Akinori Takeyama2, Takeshi Ohshima2, Kazutoshi Kojima3, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1. Hiroshima Univ. (Japan), 2. QST (Japan), 3. AIST (Japan))