Presentation Information
[Th-P-51]Combining Optical Binning and Engineered SmartSiCTM Substrates for Superior MOSFET Ruggedness to Bipolar Degradation
*Tommaso Stecconi1, Roger Stark1, Paula Diaz Reigosa1, Nick Schneider1, Nicolo Oliva1, Coris Li2, Leon Liang2, Eric Guiot3, Alexandre Vaufredaz3, Ngosse Top3, Lars Knoll1 (1. SwissSEM Technologies AG (Switzerland), 2. Sun.King Pacific Semiconductor Technology (China), 3. SOITEC (France))
