[Th-P] Poster Session

[Th-P-61] The influence of surface properties on poly 3C-SiC to mono 4H-SiC wafer bonding using covalent- and fusion-bonding, with and without plasma activation.

*Jimmy Thörnberg¹, Peter Kerepsi², Cristiano Calabretta³, Kouya Shimizu⁴, Michael Dornetshumer², Björn Magnusson¹ (1. STMicroelectronics Silicone Carbide AB (Sweden), 2. EV Group (Austria), 3. STMicroelectronics - SiC Campus (Italy), 4. Sumitomo Metal Mining Co. (Japan))