[Th-P] Poster Session | ICSCRM2026

Session Details

Poster Session

[Th-P]Poster Session

Thu. Oct 1, 2026 3:00 PM - 5:00 PM JST
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC

Poster-C (4th Floor, G403+G404)

[Th-P-58]Study and Optimisation of Electrical Resistivity of Chemically Vapour Deposited Polycrystalline SiC

*Lucile Girod^1,2, Yann Gallou², Alexandre Potier², Fabien Volpi¹, Roman Reboud¹, Gustavo Adolfo Ardila³, Xavier Mescot³, Marie Amandine Pinault-Thaury⁴, Estelle Loire⁴, Didier Chaussende¹ (1. Univ. Grenoble Alpes, CNRS, Grenoble INP, SIMaP (France), 2. Mersen Gennevilliers (France), 3. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, CROMA (France), 4. GEMaC CNRS, Université Paris-Saclay, Université de Versailles St-Quentin (UVSQ) (France))

[Th-P-59]Unified Planarization and Thinning of Extracted 4H-SiC Layers for
Engineered Substrate Applications

*Hitesh Jayaprakash^1,2,3, Masum SM^3,2, Michael Rueb^2,3, Sileno Carmine⁴ (1. Freidrich Alexander Univ., Erlangen (Germany), 2. mi2-factory GmbH (Germany), 3. Ernst-Abbe-Hochschule, Jena (Germany), 4. Meister Abrasives (Switzerland))

[Th-P-60]Influence of Plasma Activation on Surface Chemistry and Wafer Bonding of 4H-SiC

*Jimmy Thörnberg¹, Peter Kerepsi², Joseph Halim¹, Michael Dornetshumer², Björn Magnusson¹ (1. STMicroelectronics Silicone Carbide AB (Sweden), 2. EV Group (Austria))

[Th-P-61]The influence of surface properties on poly 3C-SiC to mono 4H-SiC wafer bonding using covalent- and fusion-bonding, with and without plasma activation.

*Jimmy Thörnberg¹, Peter Kerepsi², Cristiano Calabretta³, Kouya Shimizu⁴, Michael Dornetshumer², Björn Magnusson¹ (1. STMicroelectronics Silicone Carbide AB (Sweden), 2. EV Group (Austria), 3. STMicroelectronics - SiC Campus (Italy), 4. Sumitomo Metal Mining Co. (Japan))

[Th-P-62]The stripe growth of heteroepitaxial 3C-SiC crystals on 4H-SiC substrate using Gibbs-Thomson solvent and the focused laser irradiation

*Yoya Tsuji¹, Yasunari Koeda¹, Masanori Suzuki¹, Masashi Nakamoto¹, Kazuhito Kamei¹, Takeshi Yoshikawa¹ (1. The Univ. of Osaka (Japan))

[Th-P-63]Simulation of Ablation Phenomena in Laser Processing
-Proposal of a New Method:the Normalization Group MD for SiC Wafers-

*Mariko Tachibana¹, Daiji Ichishima¹, Ryunosuke Kitahara¹, Hirotaka Miyazaki¹, Shuji Miyazaki¹, Sachi Yawaka¹, Yoshiyuki Tomita¹ (1. Sumitomo Heavy Industries, Ltd. (Japan))

[Th-P-64]Dopant-selective Photoelectrochemical Etching of 4H-SiC

*Michael Seidel¹, Martin Hofmann¹, Carlos Hansen¹, Maximilian Titl¹, Patrick Berwian¹, Jochen Friedrich¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany))

[Th-P-65]Exploring CMP Machine Parameters via a U-Net model and Genetic Algorithm

*Kevin Operiano¹, Roberto Iaconi¹, Fumiya Kawate¹, Saeed Sepasy², Yoshifumi Watanabe² (1. Aixtal Corp. (Japan), 2. Mipox Corp. (Japan))

[Th-P-66]Voltage-Controlled Anodic Oxidation and CMP Removal Characteristics of 4H-SiC Substrates in K₂CO₃Electrolyte

*Jiyoon Oh¹, Doyeon Kim¹ (1. Korea Institute of Industrial Technology (KITECH) (Korea))

[Th-P-67]Improved SiC Wafering Process Sequence featuring Advanced Chemical Etching (ACE) and an Optimized CMP Process

Norbert Bay¹, Catherine Bullock², Oliver Whear¹, *Franck Delahaye¹ (1. RENA Technologies GmbH (Germany), 2. ASM America Inc. (USA))

[Th-P-68]Development of Electrochemical Oxidation-Assisted SiC Grinding Process

*Shinya Hirano¹, Tomohisa Kato¹, Takeshi Mitani¹ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))

[Th-P-69]Subsurface Damage Generation and Control during SiC Polishing

*Michael A Robison^1,2, William Gemmill³, Caroline Wattinez³, Evan Krohn^1,2, Matthew Krohn^1,2, Joshua A Robinson^1,2 (1. The Pennsylvania State Univ. (USA), 2. Silicon Carbide Innovation Alliance (USA), 3. Pureon Inc. (USA))

[Th-P-70]Evaluation of the Effective C/Si ratios during Thermal Etching and Growth on 4H-SiC(0001) Based on Macrostep Morphology

*Kohei Toda¹, Hibiki Tanaka², Riku Maeda², Koji Ashida¹, Daichi Dojima¹, Hiroshi Mihara¹, Tadaaki Kaneko^1,2 (1. QureDA Research, Inc. (Japan), 2. Kwansei Gakuin university (Japan))

[Th-P-71]Elucidating Differing Crystal Growth Mechanisms for On-Axis and Off-Axis CVD-Grown SiC on 4H-SiC Substrate Through Photoluminescence Cartography

*Harmke Dorien van Dijk¹, Rafał Jakieła², Matthieu Paillet¹, Ahmed Azmi Zahab¹, Jean Roch Huntzinger¹, Sandrine Juillaguet¹, Hervé Peyre¹, Thomas Cohen¹, Olivier Briot¹, Marcin Zielinski³ (1. L2C CNRS Université de Montpellier (France), 2. Inst. of Physics of the Polish Academy of Sciences (Poland), 3. Soitec S. A. (France))

[Th-P-72]Short Basal Plane Dislocations in 4H-SiC Epilayers and Their Relationship to the Growth Mode at the Upstream Part of the Step-Flow

*Johji Nishio^1,2, Yuto Sasaki¹, Yohei Harada¹, Chiharu Ota², Keisuke Kurashima¹ (1. NuFlare Technology, Inc. (Japan), 2. Toshiba Corp. (Japan))

[Th-P-73]Systematic Investigation and Reduction of Triangle-Shaped Defects (TriDs) in Thick SiC Epitaxial Layers

*Bumjoon Kim¹, Michael Coco¹, Hyun-Don Jung², Soo Min Lee¹, Drew Hanser¹ (1. Veeco Instruments Inc. (USA), 2. HORIBA STEC KOREA, Ltd. (Korea))

[Th-P-74]Epitaxial Wafer Engineering for Free-Standing 4H-SiC Membrane Beam Monitors and Harsh-Environment Detector Platforms

*Marco Mauceri¹, Gabriele Trovato^5,3,6,4, Mario Lizzio¹, Maria Luisa Alonzo¹, Silvio Preti¹, Massimo Camarda^2,5,4 (1. ASM International (Italy), 2. Sensic (Switzerland), 3. INFN (Italy), 4. IMM-CT (Italy), 5. STlab (Italy), 6. Dipartimento di Fisica e Astronomia “Ettore Majorana” (Italy))

[Th-P-75]High-aspect ratio CVD coating of TaC reaching deep recesses and channels in graphite components used in SiC- and GaN-epitaxy

*Charles Wijayawardhana¹ (1. SGL Carbon GmbH (Germany))

[Th-P-76]Scalable Large Area Diamond Growth with High Uniformity for Thermal Management Applications

*Tasya Muhamad Yasser¹, Alexandre Fiori¹, Satoshi Ihida¹, Masami Shibagaki¹, Kazuo Tsugawa¹, Manabu Ikemoto¹ (1. Seki Diamond Systems, Cornes Technologies Ltd. (Japan))

[Th-P-77]Dislocation Engineering of Basal Plane Dislocations in 4H-SiC Substrates using High-Temperature Annealing

Jae-Hwan Kim^1,2, Gyeong-Mi Hwang¹, Shunta Harada³, Kotaro Ishiji⁴, Won-Jae Lee⁵, Chan-Ho Park⁵, Jung-Gyu Kim⁶, Yeon-Suk Jang⁶, Seong-Min Jeong¹, *Yun-Ji Shin¹ (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. SAGA Light Source (Japan), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))

[Th-P-78]Formation Mechanism of Duple-Basal Plane Dislocations in 4H-SiC Epitaxial Layers

*Lin Dong¹, Valeria Dellien Roempler¹, Stefan Nufer¹ (1. Robert Bosch GmbH (Germany))

[Th-P-79]Structural Analysis of Unconverted Basal Plane Dislocations at 4H-SiC Epitaxial/Substrate Interface

*Hideki Sako¹, Shohei Hayashi¹, Ohira Kentaro², Daisuke Bizen², Kenji Kobayashi², Noriyuki Hasuike³, Toshiyuki Isshiki³ (1. Toray Research Center, Inc. (Japan), 2. Hitachi High-Tech Corp. (Japan), 3. Kyoto Institute of Technology (Japan))

[Th-P-80]On the Critical Threshold for the Expansion of a Single Shockley-Type Stacking Fault in n-Type 4H-SiC

*Yasuyuki Igarashi¹, Hiroumi Matsui¹ (1. ITES Co., Ltd. (Japan))

[Th-P-81]Structural Analysis of Stacking Fault Complexes with Different Characteristics in 4H-SiC Epitaxial Wafer

*Shohei Hayashi¹, Junji Senzaki² (1. Toray Research Center Inc. (Japan), 2. AIST (Japan))

[Th-P-82]Half-loop Arrays Induced by the Close-up Micropipe-Twins Including a-component in 4H-SiC Substrate

*Ryo Hattori¹, Tomoyuki Uchida², Ryuichi Sugie³ (1. Ceramic Forum, Inc. (Japan), 2. Toray Reaserach Center, Inc. (Japan), 3. Ritsumeikan University (Japan))

[Th-P-83]Dislocation Strain Energy and Micropipe Formation by MD Simulation

*Georg Holub^1,2, Lorenz Romaner^1,2 (1. Technical Univ. of Leoben (Austria), 2. Christian Doppler Lab. for Advanced Computational Design of Crystal Growth (Austria))

[Th-P-84]Thermal Annealing Induced Dislocation Phenomena in 4H-SiC Substrates Using 2D&3D XRT Analysis

Gyeong-Mi Hwang¹, Jae-Hwan Kim^1,2, Shunta Harada³, Paul Wimmer⁴, Christian Kranert⁴, Won-Jae Lee⁵, Jung-Gyu Kim⁶, Yeon-Suk Jang⁶, Seong-Min Jeong¹, *Yun-Ji Shin¹ (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. Fraunhofer IISB (Germany), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))

[Th-P-85]Comparative Study of Crystal Defect Imaging in 4H-SiC Wafers Using Synchrotron X-ray Topography, Optical Inspection, and Multiphoton Photoluminescence

*Jiayi Liang¹, Yuhui Huang¹, Hirofumi Hoshida², Shota Fujiki², Takayoshi Shimura^1,3 (1. Waseda Univ. (Japan), 2. Lasertec Corp. (Japan), 3. RIKEN SPring-8 Center (Japan))

[Th-P-86]A SWB-XRT study of defects within trench refill epitaxy for 4H-SiC superjunctions

Robin Scales², Gerard Colston¹, Arash Estiri¹, Athul Rathnakar¹, Oliver Fox³, Tamzin Lafford⁴, Kelly Turner¹, Marina Antoniou¹, Arne Ben Renz¹, Peter M Gammon¹, Dong Lilly Liu², *Vishal Ajit Shah¹ (1. University of Warwick (UK), 2. University of Oxford (UK), 3. Diamond Light Source (UK), 4. Bruker Ltd (UK))

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