Session Details
[Th-P]Bulk Growth and Wafer Processing
Thu. Oct 1, 2026 3:00 PM - 5:00 PM JST
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC
Poster-C(4th Floor, G403+G404)
[Th-P-62]The stripe growth of heteroepitaxial 3C-SiC crystals on 4H-SiC substrate using Gibbs-Thomson solvent and the focused laser irradiation
*Yoya Tsuji1, Yasunari Koeda1, Masanori Suzuki1, Masashi Nakamoto1, Kazuhito Kamei1, Takeshi Yoshikawa1 (1. The Univ. of Osaka (Japan))
[Th-P-63]Simulation of Ablation Phenomena in Laser Processing
-Proposal of a New Method:the Normalization Group MD for SiC Wafers-
*Mariko Tachibana1, Daiji Ichishima1, Ryunosuke Kitahara1, Hirotaka Miyazaki1, Shuji Miyazaki1, Sachi Yawaka1, Yoshiyuki Tomita1 (1. Sumitomo Heavy Industries, Ltd. (Japan))
[Th-P-64]Dopant-selective Photoelectrochemical Etching of 4H-SiC
*Michael Seidel1, Martin Hofmann1, Carlos Hansen1, Maximilian Titl1, Patrick Berwian1, Jochen Friedrich1 (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany))
[Th-P-65]Exploring CMP Machine Parameters via a U-Net model and Genetic Algorithm
*Kevin Operiano1, Roberto Iaconi1, Fumiya Kawate1, Saeed Sepasy2, Yoshifumi Watanabe2 (1. Aixtal Corp. (Japan), 2. Mipox Corp. (Japan))
[Th-P-66]Voltage-Controlled Anodic Oxidation and CMP Removal Characteristics of 4H-SiC Substrates in K2CO3 Electrolyte
*Jiyoon Oh1, Doyeon Kim1 (1. Korea Institute of Industrial Technology (KITECH) (Korea))
[Th-P-67]Improved SiC Wafering Process Sequence featuring Advanced Chemical Etching (ACE) and an Optimized CMP Process
Norbert Bay1, Catherine Bullock2, Oliver Whear1, *Franck Delahaye1 (1. RENA Technologies GmbH (Germany), 2. ASM America Inc. (USA))
[Th-P-68]Development of Electrochemical Oxidation-Assisted SiC Grinding Process
*Shinya Hirano1, Tomohisa Kato1, Takeshi Mitani1 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
[Th-P-69]Subsurface Damage Generation and Control during SiC Polishing
*Michael A Robison1,2, William Gemmill3, Caroline Wattinez3, Evan Krohn1,2, Matthew Krohn1,2, Joshua A Robinson1,2 (1. The Pennsylvania State Univ. (USA), 2. Silicon Carbide Innovation Alliance (USA), 3. Pureon Inc. (USA))
[Th-P-87]Electronic Structure Theory for Polytype Nucleus Stability
*Kenji Hayashida1 (1. Research Center for Computational Science and Informatics, Resonac Corp. (Japan))
[Th-P-89LN]Thermal Field Optimization toward Improved Crystal Quality of 12-inch n-type 4H-SiC Single Crystals Grown by PVT
*Chengjin Qin1, Xianglong Yang1, Xiufang Chen1, Guanglei Zhong1, Xuejian Xie1, Zhenxing Fu1, Xixi Xiong1, Wenhao Han1, Guojian Yu2, Xiangang Xu1 (1. Shandong University (China), 2. Guangzhou Summit Crystal Semiconductor Co., Ltd (China))