[Th-P] Poster Session

[Th-P-62] The stripe growth of heteroepitaxial 3C-SiC crystals on 4H-SiC substrate using Gibbs-Thomson solvent and the focused laser irradiation

*Yoya Tsuji¹, Yasunari Koeda¹, Masanori Suzuki¹, Masashi Nakamoto¹, Kazuhito Kamei¹, Takeshi Yoshikawa¹ (1. The Univ. of Osaka (Japan))