Presentation Information
[Th-P-64]Dopant-selective Photoelectrochemical Etching of 4H-SiC
*Michael Seidel1, Martin Hofmann1, Carlos Hansen1, Maximilian Titl1, Patrick Berwian1, Jochen Friedrich1 (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB (Germany))