[Th-P] Poster Session

[Th-P-72] Short Basal Plane Dislocations in 4H-SiC Epilayers and Their Relationship to the Growth Mode at the Upstream Part of the Step-Flow

*Johji Nishio^1,2, Yuto Sasaki¹, Yohei Harada¹, Chiharu Ota², Keisuke Kurashima¹ (1. NuFlare Technology, Inc. (Japan), 2. Toshiba Corp. (Japan))