Presentation Information
[Th-P-77]Dislocation Engineering of Basal Plane Dislocations in 4H-SiC Substrates using High-Temperature Annealing
Jae-Hwan Kim1,2, Gyeong-Mi Hwang1, Shunta Harada3, Kotaro Ishiji4, Won-Jae Lee5, Chan-Ho Park5, Jung-Gyu Kim6, Yeon-Suk Jang6, Seong-Min Jeong1, *Yun-Ji Shin1 (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. SAGA Light Source (Japan), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))