Presentation Information
[Th-P-79]Structural Analysis of Unconverted Basal Plane Dislocations at 4H-SiC Epitaxial/Substrate Interface
*Hideki Sako1, Shohei Hayashi1, Ohira Kentaro2, Daisuke Bizen2, Kenji Kobayashi2, Noriyuki Hasuike3, Toshiyuki Isshiki3 (1. Toray Research Center, Inc. (Japan), 2. Hitachi High-Tech Corp. (Japan), 3. Kyoto Institute of Technology (Japan))