Presentation Information
[Th-P-84]Thermal Annealing Induced Dislocation Phenomena in 4H-SiC Substrates Using 2D&3D XRT Analysis
Gyeong-Mi Hwang1, Jae-Hwan Kim1,2, Shunta Harada3, Paul Wimmer4, Christian Kranert4, Won-Jae Lee5, Jung-Gyu Kim6, Yeon-Suk Jang6, Seong-Min Jeong1, *Yun-Ji Shin1 (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. Fraunhofer IISB (Germany), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))