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[Th-P-93LN]Effect of Post Epi Processing on Changes in Lattice Distortion in Thick 4H-SiC Epitaxial Wafers for High-Voltage Power Devices
Kaixuan Zhang1, Zeyu Chen1, Jianpei Zhang1, Haochi Wang1, Jaehyun Suh1, Alecsander Imhof2, Nadeem Mahadik2, Ryan Branco3, Dong Lee3, Shanthi Subramanian3, Mehrnegar Aghayan4, Robert Gossman4, *Balaji Raghothamachar1, Michael Dudley1 (1. Stony Brook University (USA), 2. U. S. Naval Research Laboratory (USA), 3. Coherent Corporation (USA), 4. GE Aerospace (USA))