Session Details
[Th-P]Extended Defects
Thu. Oct 1, 2026 3:00 PM - 5:00 PM JST
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC
Thu. Oct 1, 2026 6:00 AM - 8:00 AM UTC
Poster-C(4th Floor, G403+G404)
[Th-P-77]Dislocation Engineering of Basal Plane Dislocations in 4H-SiC Substrates using High-Temperature Annealing
Jae-Hwan Kim1,2, Gyeong-Mi Hwang1, Shunta Harada3, Kotaro Ishiji4, Won-Jae Lee5, Chan-Ho Park5, Jung-Gyu Kim6, Yeon-Suk Jang6, Seong-Min Jeong1, *Yun-Ji Shin1 (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. SAGA Light Source (Japan), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))
[Th-P-78]Formation Mechanism of Duple-Basal Plane Dislocations in 4H-SiC Epitaxial Layers
*Lin Dong1, Valeria Dellien Roempler1, Stefan Nufer1 (1. Robert Bosch GmbH (Germany))
[Th-P-79]Structural Analysis of Unconverted Basal Plane Dislocations at 4H-SiC Epitaxial/Substrate Interface
*Hideki Sako1, Shohei Hayashi1, Ohira Kentaro2, Daisuke Bizen2, Kenji Kobayashi2, Noriyuki Hasuike3, Toshiyuki Isshiki3 (1. Toray Research Center, Inc. (Japan), 2. Hitachi High-Tech Corp. (Japan), 3. Kyoto Institute of Technology (Japan))
[Th-P-80]On the Critical Threshold for the Expansion of a Single Shockley-Type Stacking Fault in n-Type 4H-SiC
*Yasuyuki Igarashi1, Hiroumi Matsui1 (1. ITES Co., Ltd. (Japan))
[Th-P-81]Structural Analysis of Stacking Fault Complexes with Different Characteristics in 4H-SiC Epitaxial Wafer
*Shohei Hayashi1, Junji Senzaki2 (1. Toray Research Center Inc. (Japan), 2. AIST (Japan))
[Th-P-82]Half-loop Arrays Induced by the Close-up Micropipe-Twins Including a-component in 4H-SiC Substrate
*Ryo Hattori1, Tomoyuki Uchida2, Ryuichi Sugie3 (1. Ceramic Forum, Inc. (Japan), 2. Toray Reaserach Center, Inc. (Japan), 3. Ritsumeikan University (Japan))
[Th-P-83]Dislocation Strain Energy and Micropipe Formation by MD Simulation
*Georg Holub1,2, Lorenz Romaner1,2 (1. Technical Univ. of Leoben (Austria), 2. Christian Doppler Lab. for Advanced Computational Design of Crystal Growth (Austria))
[Th-P-84]Thermal Annealing Induced Dislocation Phenomena in 4H-SiC Substrates Using 2D&3D XRT Analysis
Gyeong-Mi Hwang1, Jae-Hwan Kim1,2, Shunta Harada3, Paul Wimmer4, Christian Kranert4, Won-Jae Lee5, Jung-Gyu Kim6, Yeon-Suk Jang6, Seong-Min Jeong1, *Yun-Ji Shin1 (1. KICET (Korea), 2. Pusan National Univ. (Korea), 3. Nagoya Univ. (Japan), 4. Fraunhofer IISB (Germany), 5. Dong-Eui Univ. (Korea), 6. EINCRYSTAL Co.,Ltd. (Korea))
[Th-P-85]Comparative Study of Crystal Defect Imaging in 4H-SiC Wafers Using Synchrotron X-ray Topography, Optical Inspection, and Multiphoton Photoluminescence
*Jiayi Liang1, Yuhui Huang1, Hirofumi Hoshida2, Shota Fujiki2, Takayoshi Shimura1,3 (1. Waseda Univ. (Japan), 2. Lasertec Corp. (Japan), 3. RIKEN SPring-8 Center (Japan))
[Th-P-86]A SWB-XRT study of defects within trench refill epitaxy for 4H-SiC superjunctions
Robin Scales2, Gerard Colston1, Arash Estiri1, Athul Rathnakar1, Oliver Fox3, Tamzin Lafford4, Kelly Turner1, Marina Antoniou1, Arne Ben Renz1, Peter M Gammon1, Dong Lilly Liu2, *Vishal Ajit Shah1 (1. University of Warwick (UK), 2. University of Oxford (UK), 3. Diamond Light Source (UK), 4. Bruker Ltd (UK))
[Th-P-93LN]Effect of Post Epi Processing on Changes in Lattice Distortion in Thick 4H-SiC Epitaxial Wafers for High-Voltage Power Devices
Kaixuan Zhang1, Zeyu Chen1, Jianpei Zhang1, Haochi Wang1, Jaehyun Suh1, Alecsander Imhof2, Nadeem Mahadik2, Ryan Branco3, Dong Lee3, Shanthi Subramanian3, Mehrnegar Aghayan4, Robert Gossman4, *Balaji Raghothamachar1, Michael Dudley1 (1. Stony Brook University (USA), 2. U. S. Naval Research Laboratory (USA), 3. Coherent Corporation (USA), 4. GE Aerospace (USA))
[Th-P-94LN]Contrasting Effects of Stopped and Through-Wafer Proton Implantation on Shockley Stacking-Fault Expansion in 4H-SiC
*Kazumi Takano1, Yasuyuki Igarashi1, Yohsuke Matsushita1, Takuya Morita1, Hiroumi Matsui1 (1. ITES (Japan))