Presentation Information
[Tu-1A-01]Low Negative Bias Temperature Instability in Vertical 4H-SiC FinFETs
*Hitoshi Fujioka1, Eiji Kagoshima1, Teruaki Kumazawa1, Masahiro Kumita1, Yuta Furumura1, Tsuyoshi Nishiwaki1, Hirokazu Fujiwara1, Qian Wang2, Tsunenobu Kimoto3, Florin Udrea2 (1. MIRISE Technologies Corp. (Japan), 2. Univ. of Cambridge (UK), 3. Kyoto Univ. (Japan))