ICSCRM2026
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Session Details

Oral SessionTrack 07 Power Devices

[Tu-1A]Novel Architectures

Tue. Sep 29, 2026 8:40 AM - 10:20 AM JST
Tue. Sep 29, 2026 11:40 PM - 1:20 AM UTC
Oral-A(1st Floor, G7+G8)
Chair:Mario Giuseppe Saggio(STMicroelectronics, Italy), Victor Veliadis(PowerAmerica, USA)
8:40 AM - 9:00 AM JST(11:40 PM - 12:00 AM UTC)

[Tu-1A-01]Low Negative Bias Temperature Instability in Vertical 4H-SiC FinFETs

*Hitoshi Fujioka1, Eiji Kagoshima1, Teruaki Kumazawa1, Masahiro Kumita1, Yuta Furumura1, Tsuyoshi Nishiwaki1, Hirokazu Fujiwara1, Qian Wang2, Tsunenobu Kimoto3, Florin Udrea2 (1. MIRISE Technologies Corp. (Japan), 2. Univ. of Cambridge (UK), 3. Kyoto Univ. (Japan))
9:00 AM - 9:20 AM JST(12:00 AM - 12:20 AM UTC)

[Tu-1A-02]Investigation and Improvement of the Trade Off Between Reverse Recovery and Conduction Performance in SiC MOSFETs

*Jeff Joohyung Kim1, Jae-Hyung Park1, Arman Ur Rashid1, Sei-Hyung Ryu1 (1. Wolfspeed, Inc. (USA))
9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[Tu-1A-03]Improving Conduction–Switching Correlation by Split-Gate Structure in 4H-SiC Hexagonal MOSFETs

*Chih-Yen Teng1, Kung-Yen Lee1,2, Pei-Chun Liao2, Jung-Chieh Chen1, Lu-Heng Wang2, Yen-Lin Chiu1, Ruei-Ci Wu3 (1. Department of Engineering Science and Ocean Engineering, National Taiwan University (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan University (Taiwan), 3. SiCEV Electronics Co., Ltd, Taiwan)
9:40 AM - 10:00 AM JST(12:40 AM - 1:00 AM UTC)

[Tu-1A-04]Investigation of Saturation Current Characteristics and Short-Circuit Behavior of Monolithically Integrated 1.2 kV SiC Bi-Directional MOSFETs

*Seung Yup Jang1,4, Stephen A Mancini1, Daixin Chen2, Andrew Binder3, Richard Floyd3, Robert Kaplar3, Jack Flicker3, Stan Atcitty3, Adam J Morgan4, Xiaoqing Song2, Woongje Sung1 (1. Univ. at Albany (USA), 2. Univ. of Arkansas (USA), 3. Sandia National Labs. (USA), 4. NoMIS Power Corp. (USA))
10:00 AM - 10:20 AM JST(1:00 AM - 1:20 AM UTC)

[Tu-1A-05]Host element (Si) deep implanted 1.2kV 4H-SiC UMOSFET without bipolar degradation

*Kensuke Takenaka1,2, Takeshi Tawara1, Shinichiro Matsunaga1, Shinsuke Harada1 (1. AIST (Japan), 2. Fuji Electric Co., Ltd. (Japan))
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