Presentation Information

[Tu-1A-03]Improving Conduction–Switching Correlation by Split-Gate Structure in 4H-SiC Hexagonal MOSFETs

*Chih-Yen Teng1, Kung-Yen Lee1,2, Pei-Chun Liao2, Jung-Chieh Chen1, Lu-Heng Wang2, Yen-Lin Chiu1, Ruei-Ci Wu3 (1. Department of Engineering Science and Ocean Engineering, National Taiwan University (Taiwan), 2. Graduate School of Advanced Technology, National Taiwan University (Taiwan), 3. SiCEV Electronics Co., Ltd, Taiwan)