Presentation Information

[Tu-1A-05]Host element (Si) deep implanted 1.2kV 4H-SiC UMOSFET without bipolar degradation

*Kensuke Takenaka1,2, Takeshi Tawara1, Shinichiro Matsunaga1, Shinsuke Harada1 (1. AIST (Japan), 2. Fuji Electric Co., Ltd. (Japan))