[Tu-1B] Bulk Growth II

9:10 AM - 9:30 AM JST(12:10 AM - 12:30 AM UTC)

[Tu-1B-02] Growth and Defect Analysis of Low-Doped 4H-SiC Bulk Crystals Grown by High-Temperature CVD

*Satoshi Matsuzawa^1,2, Fumihiro Fujie¹, Satoshi Asada¹, Dai Kutsuzawa¹, Tomohiro Shonai², Hidekazu Tsuchida¹ (1. Central Res. Inst. of Electric Power Indus. (Japan), 2. Resonac Corp. (Japan))