[Tu-1B] Bulk Growth II | ICSCRM2026

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Oral SessionTrack 01 Bulk Growth and Wafer Processing

[Tu-1B]Bulk Growth II

Tue. Sep 29, 2026 8:40 AM - 10:10 AM JST
Tue. Sep 29, 2026 11:40 PM - 1:10 AM UTC

Oral-B(3rd Floor, G303+G304)

Chair:Seong-Min JEONG(Korea Institute of Ceramic Engineering and Technology, Korea), Elif Balkas(Wolfspeed, USA)

8:40 AM - 9:10 AM JST(11:40 PM - 12:10 AM UTC)

[Tu-1B-01]Continuous Quality Enhancement of P-type 4H-SiC Substrates through Solution Growth

*Yifan Dang¹, Can Zhu¹, Penglei Chen¹, pengfei Liu¹, Huiqin Zhou¹, Tianyu Shu¹, Chao Gao¹ (1. SICC Co. Ltd. (China))

9:10 AM - 9:30 AM JST(12:10 AM - 12:30 AM UTC)

[Tu-1B-02]Growth and Defect Analysis of Low-Doped 4H-SiC Bulk Crystals Grown by High-Temperature CVD

*Satoshi Matsuzawa^1,2, Fumihiro Fujie¹, Satoshi Asada¹, Dai Kutsuzawa¹, Tomohiro Shonai², Hidekazu Tsuchida¹ (1. Central Res. Inst. of Electric Power Indus. (Japan), 2. Resonac Corp. (Japan))

9:30 AM - 9:50 AM JST(12:30 AM - 12:50 AM UTC)

[Tu-1B-03]Dynamics of step morphology evolution during SiC solution growth under switching flow conditions

*Zhicheng Guan¹, Xin Liu², Kentaro Kutsukake^1,3, Shunta Harada^1,3, Toru Ujihara^1,2,3 (1. Graduate School of Engineering, Nagoya University (Japan), 2. D-center, Nagoya University (Japan), 3. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University (Japan))

9:50 AM - 10:10 AM JST(12:50 AM - 1:10 AM UTC)

[Tu-1B-04]Application of Close Space Physical Vapor Transport for Large Area Growth of n-type 4H-SiC Thin Crystals using a TableTop Setup

*Peter J Wellmann¹, Philipp Wunder¹, Ole Schneider¹, Cristina Grazzi¹ (1. Universität Erlangen-Nürnberg (FAU) (Germany))

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