Presentation Information

[Tu-2A-01]Unique Threshold-Voltage Behavior in SiC n-Channel FinFETs with Fin Widths from 26 to 530 nm

*Eiji Kagoshima1, Aiko Ichimura1, Hitoshi Fujioka1, Jun Saito1, Tsuyoshi Nishiwaki1, Hirokazu Fujiwara1, Tsunenobu Kimoto2 (1. MIRISE Technologies Corp. (Japan), 2. Kyoto Univ. (Japan))