[Tu-2A] FinFET and Trench Interfaces | ICSCRM2026

Advanced Search

Session Details

Oral SessionTrack 05 MOS Gate Stack Processing and Characterization

[Tu-2A]FinFET and Trench Interfaces

Tue. Sep 29, 2026 10:40 AM - 12:30 PM JST
Tue. Sep 29, 2026 1:40 AM - 3:30 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Edward Robert Van Brunt(onsemi, USA), Takuji Hosoi(National Institute for Materials Science, Japan)

10:40 AM - 11:10 AM JST(1:40 AM - 2:10 AM UTC)

[Tu-2A-01]Unique Threshold-Voltage Behavior in SiC n-Channel FinFETs with Fin Widths from 26 to 530 nm

*Eiji Kagoshima¹, Aiko Ichimura¹, Hitoshi Fujioka¹, Jun Saito¹, Tsuyoshi Nishiwaki¹, Hirokazu Fujiwara¹, Tsunenobu Kimoto² (1. MIRISE Technologies Corp. (Japan), 2. Kyoto Univ. (Japan))

11:10 AM - 11:30 AM JST(2:10 AM - 2:30 AM UTC)

[Tu-2A-02]Demonstration of a SiC P-Channel FinFET with Enhanced Mobility

*Shion Toshimitsu¹, Eiji Kagoshima², Hirokazu Fujiwara², Kyota Mikami¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ. (Japan), 2. MIRISE Technologies Corp. (Japan))

11:30 AM - 11:50 AM JST(2:30 AM - 2:50 AM UTC)

[Tu-2A-03]Separated Source Sum-Difference (S3D) Extraction Method for Accurate Trench Sidewall Mobility Evaluation in SiC Trench MOSFETs

*Leming Jiao^1,2, Yu-Chieh Chien¹, Zijie Zheng^1,2, Xiaolin Wang^1,2, Runze Wang¹, Weijie Wang¹, Abdul Hannan Yeo¹, Qin Gui Voo¹, Liyuan Liu¹, Xinghua Wang¹, Umesh Chand¹, Xiao Gong^1,2, Navab Singh¹, Yee Chia Yeo^1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. National Univ. of Singapore (Singapore))

11:50 AM - 12:10 PM JST(2:50 AM - 3:10 AM UTC)

[Tu-2A-04]Unveiling Face-Dependent Mobility-Limiting Scattering Mechanisms in 4H-SiC Trench Sidewall Channels

*Xiaolin Wang^1,2, Yu-Chieh Chien¹, Leming Jiao^1,2, Zijie Zheng^1,2, Weijie Wang¹, Runze Wang¹, Xinghua Wang¹, Abdul Hannan Yeo¹, Qin Gui Voo Roth¹, Liyuan Liu¹, Umesh Chand¹, Xiao Gong^1,2, Navab Singh¹, Yee Chia Yeo^1,2 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. National Univ. of Singapore (Singapore))

12:10 PM - 12:30 PM JST(3:10 AM - 3:30 AM UTC)

[Tu-2A-05]Mobility Enhancement Mechanism of 4H-SiC Trench Sidewall
MOS Channels Evaluated by 3D-VDP

*Kana Hiramatsu¹, Hirohisa Hirai¹, Eiji Kagoshima², Mitsuru Sometani¹, Keisuke Nagaya¹, Jun Saito², Takaya Shimono², Tsuyoshi Nishiwaki², Hirokazu Fujiwara², Mitsuo Okamoto¹ (1. National Inst. of Advanced Indus. Science and Technology (AIST) (Japan), 2. MIRISE Technologies Corp. (Japan))

Back to Category List