Presentation Information
[Tu-2A-05]Mobility Enhancement Mechanism of 4H-SiC Trench Sidewall
MOS Channels Evaluated by 3D-VDP
*Kana Hiramatsu1, Hirohisa Hirai1, Eiji Kagoshima2, Mitsuru Sometani1, Keisuke Nagaya1, Jun Saito2, Takaya Shimono2, Tsuyoshi Nishiwaki2, Hirokazu Fujiwara2, Mitsuo Okamoto1 (1. National Inst. of Advanced Indus. Science and Technology (AIST) (Japan), 2. MIRISE Technologies Corp. (Japan))