Presentation Information
[Tu-2B-02]Synchrotron X-ray Topography Observation of BPD Loops in Thick 4H-SiC Epilayers (60um-110um) Originating from Prismatic Slip Dislocations in 4H-SiC Substrates
Kaixuan Zhang1, Zeyu Chen1, Jianpei Zhang1, Haochi Wang1, Jaehyun Suh1, Alecsander Imhof2, Nadeem Mahadik2, *Balaji Raghothamachar1, Michael Dudley1 (1. Stony Brook University (USA), 2. U.S. Naval Research Laboratory (USA))
