[Tu-2B] Extended Defects I | ICSCRM2026

Session Details

Oral SessionTrack 03 Extended Defects

[Tu-2B]Extended Defects I

Tue. Sep 29, 2026 10:40 AM - 12:30 PM JST
Tue. Sep 29, 2026 1:40 AM - 3:30 AM UTC

Oral-B(3rd Floor, G303+G304)

Chair:Nadeemullah A. Mahadik(United States Naval Research Laboratory, USA), Soon-Ku Hong(Chungnam National University, Korea)

10:40 AM - 11:10 AM JST(1:40 AM - 2:10 AM UTC)

[Tu-2B-01]Interactions between point defects/impurities and extended defects during 4H-SiC crystal growth

*Noboru Ohtani¹ (1. Kwansei Gakuin University, Japan (Japan))

11:10 AM - 11:30 AM JST(2:10 AM - 2:30 AM UTC)

[Tu-2B-02]Synchrotron X-ray Topography Observation of BPD Loops in Thick 4H-SiC Epilayers (60um-110um) Originating from Prismatic Slip Dislocations in 4H-SiC Substrates

Kaixuan Zhang¹, Zeyu Chen¹, Jianpei Zhang¹, Haochi Wang¹, Jaehyun Suh¹, Alecsander Imhof², Nadeem Mahadik², *Balaji Raghothamachar¹, Michael Dudley¹ (1. Stony Brook University (USA), 2. U.S. Naval Research Laboratory (USA))

11:30 AM - 11:50 AM JST(2:30 AM - 2:50 AM UTC)

[Tu-2B-03]Wafer-scale characterization of threading mixed dislocations in 4H-SiC using commercial X-ray topography and polarized light microscopy

*Shunta Harada^1,2, Kosei Takahashi¹, Kota Tsujimori², Michio Kawase¹, Kenta Shimamoto³, Yuya Mizutani⁴, Seiya Mizutani⁴, Seiji Mizutani⁴, Kenta Murayama⁴ (1. Nagoya Univ. (Japan), 2. SSR Corp. (Japan), 3. Rigaku Corp. (Japan), 4. Mipox Corp. (Japan))

11:50 AM - 12:10 PM JST(2:50 AM - 3:10 AM UTC)

[Tu-2B-04]Analysis of Defect Configurations in 4H-SiC Epilayers Obtained by Multi-Epitaxial Process by Synchrotron Monochromatic Beam X-ray Topography

*Zeyu Chen¹, Balaji Raghothamachar¹, Reza Ghandi², Stacey Kennerly², Michael Dudley¹ (1. Stony Brook University (USA), 2. GE Research (USA))

12:10 PM - 12:30 PM JST(3:10 AM - 3:30 AM UTC)

[Tu-2B-05]Estimation of Dislocation Structures at Both Ends of Short Basal Plane Dislocations in 4H-SiC Epitaxial Layers by Multi-Photon Excited Photoluminescence

*Johji Nishio¹, Yuto Sasaki¹, Jeongseung Pak², Keisuke Kurashima¹ (1. NuFlare Technology, Inc. (Japan), 2. Nikon Corp. (Japan))

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