[Tu-2B] Extended Defects I

11:50 AM - 12:10 PM JST(2:50 AM - 3:10 AM UTC)

[Tu-2B-04] Analysis of Defect Configurations in 4H-SiC Epilayers Obtained by Multi-Epitaxial Process by Synchrotron Monochromatic Beam X-ray Topography

*Zeyu Chen¹, Balaji Raghothamachar¹, Reza Ghandi², Stacey Kennerly², Michael Dudley¹ (1. Stony Brook University (USA), 2. GE Research (USA))