Presentation Information
[Tu-2B-05]Estimation of Dislocation Structures at Both Ends of Short Basal Plane Dislocations in 4H-SiC Epitaxial Layers by Multi-Photon Excited Photoluminescence
*Johji Nishio1, Yuto Sasaki1, Jeongseung Pak2, Keisuke Kurashima1 (1. NuFlare Technology, Inc. (Japan), 2. Nikon Corp. (Japan))