Presentation Information

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[Tu-3A-02]Geometrical Engineering of Trench Corners via High Temperature Annealing: Mitigating Field Crowding and Enhancing Dielectric Reliability in 8 Inch SiC Trench MOSFETS

*Minghua Zhu¹, Cen Tang¹, Da Wang¹, Tianlin Yang¹, Ziting Tan¹, Zijing Huang¹, Bin Hu¹, Yuting Tang¹, Wentao Yang¹, Jin Rao¹ (1. Huawei Technologies Co., Ltd., Shenzhen, China (China))

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