[Tu-3A] Implantation and Trench Process Optimization | ICSCRM2026

Advanced Search

Session Details

Oral SessionTrack 06 Implantation, Contacts, Etching, and Other Processes

[Tu-3A]Implantation and Trench Process Optimization

Tue. Sep 29, 2026 2:00 PM - 3:50 PM JST
Tue. Sep 29, 2026 5:00 AM - 6:50 AM UTC

Oral-A(1st Floor, G7+G8)

Chair:Michael Robert Jennings(Swansea University, UK), Mathias Rommel(Fraunhofer IISB, Germany)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[Tu-3A-01]Dopant activation and compensation in P⁺-implanted n-type layers formed in a V-doped semi-insulating 4H-SiC substrate

*Yuki Yoshimura¹, Kyota Mikami¹, Tsunenobu Kimoto¹, Mitsuaki Kaneko¹ (1. Kyoto University (Japan))

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[Tu-3A-02]Geometrical Engineering of Trench Corners via High Temperature Annealing: Mitigating Field Crowding and Enhancing Dielectric Reliability in 8 Inch SiC Trench MOSFETS

*Minghua Zhu¹, Cen Tang¹, Da Wang¹, Tianlin Yang¹, Ziting Tan¹, Zijing Huang¹, Bin Hu¹, Yuting Tang¹, Wentao Yang¹, Jin Rao¹ (1. Huawei Technologies Co., Ltd., Shenzhen, China (China))

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[Tu-3A-03]XPS Evaluation of Etch Damage and Nitrogen Incorporation in 4H-SiC Trenches

*Runze Wang¹, Mingsheng Zhang², Hwee Leng Seng², Rong Ji², Jisheng Pan², Zijie Zheng^1,3, Yu-Chieh Chien¹, Xiaolin Wang^1,3, Leming Jiao^1,3, Liyuan Liu¹, Abdul Hannan Yeo¹, Qin Gui Voo¹, Umesh Chand¹, Xiao Gong^1,3, Navab Singh¹, Yee Chia Yeo^1,3 (1. Inst. of Microelectronics (IME), A*STAR (Singapore), 2. Inst. of Materials Res. and Eng. (IMRE), A*STAR (Singapore), 3. National Univ. of Singapore (Singapore))

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[Tu-3A-04]Optical Critical Dimension Metrology for Monitoring High-Volume Manufacturing of SiC Trench MOSFETs

*Emeric Balogh¹, Boglárka Dikó¹, Julien Körfer², Oleg Rusch², Alfréd Hajtman¹, Zsófia Kiss¹, Bence Nagy¹, Attila Sütő¹, Péter Basa¹ (1. Semilab Semiconductor Physics Laboratory (Hungary), 2. Fraunhofer Institute for Integrated Systems and Device Technology IISB (Germany))

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[Tu-3A-05]Comparative Study of Orthogonal P+ Implant Frequencies with Co-optimization of N+ and P-well Profiles in 1.2 kV 4H-SiC MOSFETs

*Dinuth Chamila Yapa Bandara Yapa Mudiyanselage¹, Skylar deBoer¹, Stephen A. Mancini¹, Justin Lynch², Seung Yup Jang², Adam J. Morgan², Woongje Sung¹ (1. State Univ. of New York, Univ. at Albany (USA), 2. NoMIS Power Corp. (USA))

Back to Category List