Presentation Information

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[Tu-3A-04]Optical Critical Dimension Metrology for Monitoring High-Volume Manufacturing of SiC Trench MOSFETs

*Emeric Balogh¹, Boglárka Dikó¹, Julien Körfer², Oleg Rusch², Alfréd Hajtman¹, Zsófia Kiss¹, Bence Nagy¹, Attila Sütő¹, Péter Basa¹ (1. Semilab Semiconductor Physics Laboratory (Hungary), 2. Fraunhofer Institute for Integrated Systems and Device Technology IISB (Germany))

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