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[Tu-3A-05]Comparative Study of Orthogonal P+ Implant Frequencies with Co-optimization of N+ and P-well Profiles in 1.2 kV 4H-SiC MOSFETs

*Dinuth Chamila Yapa Bandara Yapa Mudiyanselage1, Skylar deBoer1, Stephen A. Mancini1, Justin Lynch2, Seung Yup Jang2, Adam J. Morgan2, Woongje Sung1 (1. State Univ. of New York, Univ. at Albany (USA), 2. NoMIS Power Corp. (USA))