[Tu-3B] Rad-Hard Devices and High-Temp. ICs

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[Tu-3B-03] Investigation of Microdose Effects on Device Characteristics of 4H-SiC Trench MOSFET under Heavy-Ion Irradiation

*Tomoya Kimura¹, Takahiro Suzuki², Eiji Kagoshima¹, Kiyoka Yuge¹, Tsuyoshi Nishiwaki¹, Hirokazu Fujiwara¹, Hiroyuki Shindou² (1. MIRISE Technologies Corp. (Japan), 2. Japan Aerospace Exploration Agency (Japan))