[Tu-3B] Rad-Hard Devices and High-Temp. ICs | ICSCRM2026

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Session Details

Oral SessionTrack 08 RF, High-Temp., and Rad-Hard Devices and ICs

[Tu-3B]Rad-Hard Devices and High-Temp. ICs

Tue. Sep 29, 2026 2:00 PM - 3:50 PM JST
Tue. Sep 29, 2026 5:00 AM - 6:50 AM UTC

Oral-B(3rd Floor, G303+G304)

Chair:Sang-Mo Koo(Kwangwoon University, Korea), Mitsuaki Kaneko(Kyoto University, Japan)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[Tu-3B-01]Reliability of SiC Power Devices in Space and Atmospheric Radiation Environments

*Corinna Martinella¹ (1. Institute of Electronics and Systems (IES) - University of Montpellier (France))

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[Tu-3B-02]Effects of Cosmic Ray Irradiation on Commercial-Grade Silicon Carbide Power Devices

*Niamh Claire Arnold¹, Virendra Malin Kotagama^1,2, Arne Benjamin Renz^1,5, Gabriel Scott Parkinson³, Kimmo H Niskanen⁴, James Gott⁵, Christopher Frost⁶, Maria Kastriotou⁶, Carlo Cazzaniga⁶, Peter Michael Gammon^1,5 (1. School of Engineering, Univ. of Warwick (UK), 2. Radtest Ltd. (UK), 3. PEMC, Univ. of Nottingham (UK), 4. Accelerator Lab., Univ. of Jyväskylä (Finland), 5. Warwick Manufacturing Group, Univ. of Warwick (UK), 6. ISIS Neutron and Muon Source, Rutherford Appleton Lab. (UK))

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[Tu-3B-03]Investigation of Microdose Effects on Device Characteristics of 4H-SiC Trench MOSFET under Heavy-Ion Irradiation

*Tomoya Kimura¹, Takahiro Suzuki², Eiji Kagoshima¹, Kiyoka Yuge¹, Tsuyoshi Nishiwaki¹, Hirokazu Fujiwara¹, Hiroyuki Shindou² (1. MIRISE Technologies Corp. (Japan), 2. Japan Aerospace Exploration Agency (Japan))

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[Tu-3B-04]Demonstration of Higher-Current 500 °C Durable 4H-SiC JFET Chips

*Philip Neudeck¹, David Spry¹, Robert Macdonald², Robert Gossman², Christopher Collazo-Davila², Stacey Kennerly², Liangyu Chen³, Carl Chang⁴, Mohamed Lababidi⁴, Sean McDarby⁵ (1. NASA Glenn Research Center (USA), 2. GE Aerospace (USA), 3. Ohio Aerospace Institute (USA), 4. HX5 LLC (USA), 5. E Street Technologies (USA))

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[Tu-3B-05]Demonstration of 500°C non-volatile Memory of AlScN Ferroelectric Capacitors Controlled by SiC Lateral MOSFET

*Emad Andarawis¹, Collin Hitchcock¹, Lucy Broderick¹, Robert Gossman¹, Tammy Johnson¹, Shubhodeep Goswami¹, Mehrnegar Aghayan¹, Brendan Hanrahan², Daniel Drury², Nastazia Moshirfatemi² (1. GE Aerospace Res. (USA), 2. Army Res. Lab. (USA))

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